1 / 12

RECENT PROGRESS IN LOW-TEMPERATURE SILICON DETECTORS

RECENT PROGRESS IN LOW-TEMPERATURE SILICON DETECTORS. Univ. Catholique de Louvain, Belgium Helsinki Institute of Physics, Finland Helsinki Univ. of Technology, Finland Univ. of Turku, Finland ILK Dresden, Germany IEKP, Univ. of Karlsruhe, Germany Univ. of Munich, Germany

abla
Download Presentation

RECENT PROGRESS IN LOW-TEMPERATURE SILICON DETECTORS

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. RECENT PROGRESS IN LOW-TEMPERATURE SILICON DETECTORS Univ. Catholique de Louvain, Belgium Helsinki Institute of Physics, Finland Helsinki Univ. of Technology, Finland Univ. of Turku, Finland ILK Dresden, Germany IEKP, Univ. of Karlsruhe, Germany Univ. of Munich, Germany INFN and Univ. of Naples, Italy INFN and Univ. of Florence, Italy LIP Lisbon, Portugal Ioffe PTI, Russia JSI Ljublijana, Slovenia Univ. of Geneva, Switzerland CERN, Switzerland LHEP, Univ. of Bern, Switzerland Univ. of Brunel, UK Univ. of Glasgow, UK BNL, USA (Totally 50 scientist) Eija Tuominen / RD39 Collaboration Siena 22.10.2002

  2. OUTLINE • Why cold temperature • Activities and projects • Recent progress • Summary Eija Tuominen / RD39 Collaboration Siena 22.10.2002

  3. WHY COLD TEMPERATURE SILICON DETECTORS?(=130 K) • Radiation hardness • ... improves by factor of 10, due to Lazarus effect • -> tolerance to very high luminosities (e.g. Super-LHC: 1035 cm-2s-1) • Charge carrier mobility (electrons and holes) • ... improves by factor of 5 • -> very fast sensors • Thermal conductivity • ... improves by factor of 3, from 300 K to 130 K • -> evacuation of heat from Si modules -> facilitation of engineering design • Leakage current (bulk & surface) • ... becomes negligible even for heavily irradiated silicon Eija Tuominen / RD39 Collaboration Siena 22.10.2002

  4. ACTIVITIES AND PROJECTS • 1. Basic Research • Defects in bulk Silicon • 2. Device Physics • Cryogenic detectors • Edgeless detectors • Cryogenic modules • Pixel detectors • Microstrip detectors • 4. Common projects • RD39/TOTEM (Total Cross Section, Elastic Scattering and Diffraction Dissociation at the LHC ) • RD39/COMPASS (COmmon Muon Proton Apparatus for Structure and Spectroscopy) • RD39/RD60 (Study of Prompt Dimuon and Charm Production with Proton and Heavy Ion Beams at SPS) Eija Tuominen / RD39 Collaboration Siena 22.10.2002

  5. RECENT PROGRESS • Edgeless detectors for CERN/TOTEM • 2. Thermomechanical tests on Silicon module structures for CERN/TOTEM • 3. Cold Deep SubMicron readout circuits (APV25) for cryogenic microstrip tracker modules for CERN/COMPASS • 4. Beam telescopes for protons and lead ions for CERN/NA60 • 5. Processing and testing Magnetic Czochralski Silicondetectors Eija Tuominen / RD39 Collaboration Siena 22.10.2002

  6. top view side view back n+ front p+ diced edge sample laser diced from back 1. EDGELESS SILICON STRIP DETECTORS (TOTEM) • * TOTEM detectors are very close to beam line (~ 1 mm) to measure elastic scattering • detectors must be active down to the edges with no dead areas • * Dicing by laser cutting or by scribing / Cutting from back n+ or from front p+ surface • * Immediately after dicing: • IL(VFD=85V)  1 mA & Vbreak  80-100 V • * After 12h @ RT and diced from the non-sensitive back surface: • IL (VFD=85V)  1 uA & IL (400V) 40 uA • * After further edge etching treatment: • IL (VFD=85V) 0.15 uA & IL (400V) 0.5 uA • * Laser cutting more controllable • * Good detector performance (IV, CV, CCE) Eija Tuominen / RD39 Collaboration Siena 22.10.2002

  7. APV25 PitchAdapter Hybrid Support Cooling Pipe Detector Spacer 2. THERMOMECHANICAL TESTS FOR GLUED MODULES (TOTEM)THERMAL SIMULATIONS with ANSYS • Materials used in the simulation: • Strip Detector (30x30)  Silicon • Support (47x63)  Silicon • Hybrid (47x28)  Al2O3 • Pitch-adapter (47x9)  Silicon • Cooling pipe (0.5 ID)  CuNi • Spacer (47x9) Silicon • Components are glued together with radiation resistant cryogenicepoxy • Thermal boundary conditions: • APV25 (2.31 mW/channel) 1.2 W • Thermal radiation 235 mW • Argon Bulk Temperature 120 K • Heat Transfer Coefficient 104 W/m2K Eija Tuominen / RD39 Collaboration Siena 22.10.2002

  8. 2b. CLOSED CYCLE COOLING SYSTEM (TOTEM) * TOTEM detectors must be radiation hard  detector modules need efficient cryogenics * cooling is with cryogenic fluid pumped through a microtube circuit ( 0.3 mm) by a cryogenic micropump: - cryogenic fluid two-phase Argon - cooling power 10-100 W - Pump speed 0-6000 rpm - flow rate 100 mg/s = 5.2 ml/min Eija Tuominen / RD39 Collaboration Siena 22.10.2002

  9. 3. COLD APV25 DSM READOUT CIRCUITS (COMPASS) * COMPASS Tracker operates cryogenic silicon microstrip detector modules at high intensities * DSM (Deep SubMicron) front-end readout chip APV25 was measured at RT and at 130K * APV25’s signals are faster and higher at 130 K = cryoacceleration * Optimum at 110 K Eija Tuominen / RD39 Collaboration Siena 22.10.2002

  10. cooling pipe detector CMOS chip 4. BEAM TELESCOPES FOR PROTONS AND LEAD IONS (NA60) * Both telescopes have four planes of single-sided silicon microstrip detectors * In the Proton telescope, fast cold CMOS Deep SubMicron (DSM) preamplifiers demonstrated cryogenic acceleration and lowered noise at the operating temperatureof 130 K (Fig.1) * Lead Ion telescope was successfully operated up to the dose of 0.9 GGy in the center of the beam spot (Fig.2) Fig.1 Fig.2 Eija Tuominen / RD39 Collaboration Siena 22.10.2002

  11. 5. MAGNETIC CZOCHRALSKI SILICON DETECTORS DETECTOR PROCESSING: Simple four mask level process ELECTRICAL PERFORMANCE: IL(900 V) = 3 uA (A=32.5 cm2) Vfd = 420 V (380 um) DETECTION PERFORMANCE: Resolution  10 um Efficiency  95 % Signal/Noise  10 RADIATION TOLERANCE: Being tested: gamma, neutron, proton irradiations Eija Tuominen / RD39 Collaboration Siena 22.10.2002

  12. SUMMARY • 1. Edgeless detectors diced from the non-sensitive back surface and aged one day in air performed well as detectors. Edge etching treatment further improved the detector characteristics. • 2. Cryogenic micropump was succesfully developed for the cooling system of Silicon microstrip detector modules operating at cryogenic temperatures. • Good operation of APV25 chip was demonstrated at cryogenic temperatures. • Beam telescopes for protons and lead ions were succesfully operated at cryogenic temperatures. • Silicon detectors made on Magnetic Czochralski Silicon were processed, tested electrically, tested in muon beam, and irradiated. It is possible to design and operate radiation hard tracking detectors at cryogenic temperatures Eija Tuominen / RD39 Collaboration Siena 22.10.2002

More Related