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C.C. Shan

EFFECT OF ELECTRON BLOCKING LAYER ON EFFICIENCY DROOP IN INGAN/GAN MULTIPLE QUANTUM WELL LIGHT-EMITTING DIODES SANG-HEON HAN, DONG-YUL LEE, SANG-JUN LEE, CHU-YOUNG CHO, MIN-KI KWON, S. P. LEE,1 D. Y. NOH, DONG-JOON KIM, YONG CHUN KIM, AND SEONG-JU PARK, APPLIED PHYSICS LETTERS 94 , 231123 2009.

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C.C. Shan

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  1. EFFECT OF ELECTRON BLOCKING LAYER ON EFFICIENCY DROOP IN INGAN/GAN MULTIPLE QUANTUM WELL LIGHT-EMITTING DIODESSANG-HEON HAN, DONG-YUL LEE, SANG-JUN LEE, CHU-YOUNG CHO, MIN-KI KWON,S. P. LEE,1 D. Y. NOH, DONG-JOON KIM, YONG CHUN KIM, AND SEONG-JU PARK, APPLIED PHYSICS LETTERS 94, 231123 2009 C.C. Shan

  2. OUTLINE • Introduction • LED Fabrication • LED Performance • Conclusions • References

  3. INTRODUCTION • Electron overflow to the p-type region and results in an efficiency droop. • EBL has effectively confining electrons in the MQW region of most MQW LEDs.

  4. LED FABRICATION 550*550um2 P P-GaN LEDA:0% LEDB:22% LEDC:32% 40nm EBL 150nm MQW N N-GaN 5um 25nm buffer Sapphire (0001)

  5. LED PERFORMANCE FIG. 1. Color online V-I curves of the LEDs A, B, and C.

  6. LED PERFORMANCE FIG. 2. Color online Light output power vs current density of LEDs A, B, and C, a at low current density and b at high current density.

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