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TSV: Via lining & filling

TSV: Via lining & filling. sami.franssila@aalto.fi. TSV degree of difficulty. www.yole.fr, 2010. Basic via structure. Benfield. Process flow. Benfield. Profile & filling options. Profile & step coverage. Dielectric requirements. IEEE 2009 3D system integration conference. Resistance.

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TSV: Via lining & filling

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  1. TSV: Via lining & filling sami.franssila@aalto.fi

  2. TSV degree of difficulty www.yole.fr, 2010

  3. Basic via structure Benfield

  4. Process flow Benfield

  5. Profile & filling options

  6. Profile & step coverage

  7. Dielectric requirements IEEE 2009 3D system integration conference

  8. Resistance

  9. Why is thinningneeded? • Stepcoverage of sputter? • Maximum aspectratio ~ 5 • Taperingmakes sure the seed is continuous • W_bottom=20um, t=650um wafer -> w = 134um -> pitch ~ 200um • Pitch < 100 • > waferhas to bethinneddown

  10. Silicon vias Silex

  11. Silicon vias Silex

  12. Epoxy-lining

  13. Filling with sacrificial support

  14. Packaging with TSV cap wafer

  15. Wire bonding via metal

  16. Via electrical results

  17. Nickel wire magnetic assembly Fischer, Roxhed:

  18. Ni wire process flow Fischer, Roxhed:

  19. Solder filling

  20. Copper ball filling

  21. TSV filled by CNTs

  22. CNT growth

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