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ANODIC BONDING – WAYS OF SURFACE CLEANING

ANODIC BONDING – WAYS OF SURFACE CLEANING. Investigating different ways to clean the wafer surfaces for the anodic bonding process : Piranha bath ( H 2 SO 4 + H 2 O 2 ) Oxygen plasma Piranha bath + Oxygen plasma CMP + RCA RCA ( NH 4 OH HF HCl ). 1h. 10 min. 350°C .

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ANODIC BONDING – WAYS OF SURFACE CLEANING

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  1. ANODIC BONDING – WAYS OF SURFACE CLEANING Investigatingdifferentways to clean the wafer surfaces for the anodicbondingprocess: Piranha bath ( H2SO4 + H2O2) Oxygen plasma Piranha bath + Oxygen plasma CMP + RCA RCA (NH4OH HF HCl) 1h 10 min 350°C Gently cooling Pyrex # Silicon # 1000 V 525 µm 380 µm Ibonding 10% Ibonding

  2. ANODIC BONDING – WAYS OF SURFACE CLEANING 1h 10 min CleaningonlywithPiaranha 350°C Gently cooling 1000 V 1.27 mA 20 mA

  3. ANODIC BONDING – WAYS OF SURFACE CLEANING 1h 40 min CleaningonlywithOxygen plasma 350°C Gently cooling 1000 V 0.38 mA 3.8 mA

  4. ANODIC BONDING – WAYS OF SURFACE CLEANING 1h CleaningwithOxygen plasma + Piranha 10 min 350°C Gently cooling 1000 V 0.93 mA 10 mA

  5. ANODIC BONDING – WAYS OF SURFACE CLEANING Cleaningwith CMP + RCA Pyrex # 1000 V 350°C Max 8.5 mA  0.85 mA in 15 min Silicon # 33297

  6. ANODIC BONDING – WAYS OF SURFACE CLEANING 1.45 h 12 min Cleaningwith RCA 350°C Gently cooling Pyrex # Silicon # 22095 1000 V 0.89 mA 14 mA

  7. ANODIC BONDING – Direct bonding Wafer for LHCb Cleaningwith Piranha Pyrex # 1000 V 350°C Max 6.2 mA  0.7 mA in 15 min Silicon # 3644

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