1 / 20

MC Simulation of Silicon Pixel Detector

MC Simulation of Silicon Pixel Detector. Jianchun Wang Marina Artuso Syracuse University 11/06/00. Track. e -. E. Readout Signal Simulation. Energy deposition by charged track along its path length, and production of electron/hole pairs

billy
Download Presentation

MC Simulation of Silicon Pixel Detector

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. MC Simulation ofSilicon Pixel Detector Jianchun Wang Marina Artuso Syracuse University 11/06/00

  2. Track e- E Readout Signal Simulation • Energy deposition by charged track along its path length, and production of electron/hole pairs • Electron clouds drifting towards readout pixel in electric field (corresponding to doping and bias voltage applied) • Electron cloud spread due to diffusion • Magnetic field deflection (our sensors will be in dipole field of 1.6 T) • Realistic front end electronics (noise, threshold, digitization accuracy) Syracuse University

  3. Energy Deposition • Density effect: d • At high bg, radiative losses need to be considered (+7%) • Thin material (280mm silicon):  = 5.0 keV,  / I0 = 29 227 GeV/c p Syracuse University

  4. Production of d-ray • Number of d-ray: <N>  0.5 (Tcut=10 keV, d=280 mm) • Kinetic energy according to dN/dT • Polar angle q is calculated • Azimuthal angle f generated isotropically Syracuse University

  5. Ionization of d-ray • The d-ray range is calculated • The length of d-ray Survival probability function • Ionization uniformly • d-ray escape (only 1/4 of energy collected) Syracuse University

  6. Excitation and Ionization • Urbán model (thin material: x/I = 29 for 280mm silicon) • Excitations: E1 E2 Ionization: E3 • Cross-sections • dE/dx: C· (1-r) for excitation and C·r for ionization Syracuse University

  7. Total Charge Landau function Total Charge (ke) Syracuse University

  8. Z 0 V 0 V n+ p+ n+ on n n n p+ on n p+ n+ EZ -V +V Electric Field Syracuse University

  9. Mobility Vapplied = 140 V Vdepletion = 85 V d = 280 mm T = 300 K Syracuse University

  10. Magnetic Field Syracuse University

  11. Charge Cloud Spread • Radius of ionization trail: R = hc bg / I (~2mm) • Diffusion: D = kTm / q, sX = sY = sqrt(2Dt) Syracuse University

  12. Electronics • Noise (preamplifier, ADC) • Non-uniform threshold • Gain uncertainty • ADC precision Syracuse University

  13. Cluster Algorithm • Similar as test beam offline analysis • Plan: study overlapped cluster • This might also improve the resolution by reducing the effect of d-ray Syracuse University

  14. Charge Sharing Fraction of Cluster (row) size FPIX0 CiS p-stop Qth = 2500 e- Vbias= -140V Vdepl= -85V Measurement Simulation Syracuse University

  15. Large Size Cluster FPIX0-pstop Simulation has less large size cluster than measurement Source ? Syracuse University

  16. Measurement Simulation Charge Sharing Fraction of Cluster (row) size FPIX1 Seiko p-stop Qth = 3780 e- Vbias= -75V Vdepl= -45V Syracuse University

  17. Reconstruction Linear h correction applied Xresidual = Xtrack - Xrecon Syracuse University

  18. FPIX0 p-stop FPIX1 p-stop Resolution vs angle • No track projection error subtracted from the measurement • Resolution distribution agrees with simulation • Binary resolution degraded from 8-bit ADC Syracuse University

  19. Summary • New version simulation program works quite well • There are not much can be tuned • Plug the code into BTeV simulation • Two approaches need to be evaluated • Use GEANT simulation in energy deposition • Use the energy deposition simulation of this program Syracuse University

  20. Beam Test Track Angle Precision of the alignment is about 0.1 (i.e. Four runs of FPIX1 P-spray at 15: 15.16, 15.22, 15.25, 15.16) Syracuse University

More Related