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Advanced Lithography

Advanced Lithography. Elizabeth Despain Ghassan Sanber Mark Lowther. Developments of Techniques and Processes for AZ3312 Photoresist. Aaron Hawkins. Process Explanation. Spin on Photoresist Softbake Expose Develop Post-Exposure Bake. Goal: Reproducible 1 micron lines.

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Advanced Lithography

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  1. Advanced Lithography Elizabeth Despain Ghassan Sanber Mark Lowther Developments of Techniques and Processes for AZ3312 Photoresist Aaron Hawkins

  2. Process Explanation • Spin on Photoresist • Softbake • Expose • Develop • Post-Exposure Bake Goal: Reproducible 1 micron lines

  3. Photoresist Purity • Contaminants in photoresist bottles from: • Storage near acetone • Unclean bottles • Rubber stoppers

  4. AZ3312 Baseline Process • 10 min @ 120C, cleanroom ovens • Spin: 4000rpm, 60 sec • SB: 90C, 60 sec • Expose: 64mJ/cm2 (6.5sec) • Develop: MF300, 30 sec • PEB: 110C, 60 sec

  5. Habits for Better Resolution • Always use the hard contact option for exposure – this minimizes diffraction • Clean the mask between each exposure

  6. Experimental Results • Spin: 4000rpm • Exposure: 49.5mJ/cm2 (5 sec) • Development: 30-40 sec

  7. Lines

  8. Channels

  9. Lines and Channels

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