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2011 ITRS Emerging Research Materials [ERM] December 11-14, 2011

2011 ITRS Emerging Research Materials [ERM] December 11-14, 2011. Michael Garner – GNS Daniel Herr – SRC Paul Zimmerman, Intel. ERM Request of Korea ITRS Team. Identify areas of common interest with ERM Identify new areas for potential ERM Focus Identify material & interface requirements

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2011 ITRS Emerging Research Materials [ERM] December 11-14, 2011

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  1. 2011 ITRSEmerging Research Materials[ERM]December 11-14, 2011 Michael Garner – GNS Daniel Herr –SRC Paul Zimmerman, Intel

  2. ERM Request of Korea ITRS Team • Identify areas of common interest with ERM • Identify new areas for potential ERM Focus • Identify material & interface requirements • Most critical requirements • Status of materials and interfaces to meet requirements • What is the best way to collaborate? • Face to face meetings (Limited) • Teleconferences (Morning in Korea: How early?) • Polls* (Yes) • Review documents or positions • 2013: Feedback on ERM Drafts

  3. ERM Potential 2012 Focus AreasDevice Materials • Memory Device Materials • Redox • Select Device Materials (Desirable Non-linearities) • Updates on other Memory Materials • Logic Device Materials • N-Ge & p-III-V Materials • Processing • Graphene & CNT Progress • Nanowire Progress • Beyond CMOS Materials • Spin Materials • Complex Oxide Properties • Other

  4. ERM Potential 2012 Focus AreasCont. • Litho Materials • Directed Self Assembly Progress • Novel Resist • FEP & PIDS Materials • Monolayer and Deterministic Doping • Gate leakage & interfaces • Interconnect Materials • Molecular Cu Barrier layers • Carbon Interconnect Materials (CNT & Graphene) • Contact Resistance • Resistance

  5. ERM Potential 2012 Focus AreasCont. • Assembly & Package Materials • Novel Polymers & Fillers • Thermal conductivity • Mechanical Properties (CTE, Modulus, etc.) • Moisture Absorbance • Adhesion Properties • High Thermal Conductivity Materials • Interchip Electrical Interconnects • Nanosolders (Low temperature) • CNT Interconnects • Energy scavenging

  6. Next Steps • ERM needs to identify Research Goals vs. Production Goals

  7. Selector Device • 2 Terminal Challenges • Materials compatible with memory cell • Non-linearity mechanism understood • On/Off ratio (High current density) • Thermal stability of mechanism • Reproducibility of mechanism • Interface films • Contact resistance (big issue!! How low can we go??) • Diode Switching Materials • Resistive • Metal Insulator Transition • Threshold switch • Mixed Ionic Electronic Conduction

  8. Back-up

  9. ERD Materials • Memory Materials • ERD • STT for PIDS & FEP • Logic Materials • Alternate Channel Materials • Beyond CMOS: Charge Based • Beyond CMOS: Non-Charge & NonFET • Potential ERM Workshops

  10. Memory Materials • Memory Materials • Storage Class Memory Materials • Select Devices

  11. Memory Materials • Ferroelectric Memory • Nanoelectromechanical (NEMM) • Redox RAM • Mott Memory • Macromolecular • Molecular

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