1 / 1

NSF-MRSEC

Resistive Ferroelectric Switching at the Nanoscale. A. Gruverman, H. Lu, Y. Wang, E. Y. Tsymbal ( Nebraska MRSEC) D. Wu ( North Carolina State University, Raleigh, NC) H. W. Jang, C.M. Folkman, D. Felker, M. Rzchowski, C.-B. Eom  ( University of Wisconsin-Madison)

kara
Download Presentation

NSF-MRSEC

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Resistive Ferroelectric Switching at the Nanoscale A. Gruverman, H. Lu, Y. Wang,E. Y. Tsymbal (Nebraska MRSEC) D. Wu (North Carolina State University, Raleigh, NC) H. W. Jang, C.M. Folkman, D. Felker, M. Rzchowski, C.-B. Eom (University of Wisconsin-Madison) M. Ye. Zhuravlev (Kurnakov Institute for General and Inorganic Chemistry, RAS, Moscow, Russia) Ferroelectric materials have been the subject of intense development for use in nonvolatile memories, where bits of information are stored as polarization dipoles oriented up and down. The most serious problem related to a traditional charge-based approach to such ferroelectric memories is leakage currents that lead to a large power consumption and progressive loss of stored information. The discovery of MRSEC researchers at University of Nebraska-Lincoln in collaboration with their colleagues turns this problem into an advantage. The researchers have demonstrated a change in tunneling resistance of ultra-thin ferroelectric films of BaTiO3 by several orders of magnitude upon switching the ferroelectric polarization (Nano Letters 9, 3539 (2009)). Ferroelectric polarization pattern of a thin ferroelectric film in the form of the MRSEC logotip and the same pattern imaged by detecting local tunneling current across the film. Since measuring the electrical resistance allows a nondestructive read-out of the polarization state at a significantly lower voltage, this discovery may lead to significantly reduced power consumption of nanoelectronic devices based on tunneling conductance of ultra-thin ferroelectrics. Application of advanced measurements techniques showed that a single bit of information could be as small as 20 nanometers in diameter (1/1000th diameter of a human hair). This discovery followed theoretical predictions made earlier by Nebraska MRSEC researchers (Phys. Rev. Lett. 94, 246802 (2005)) and could revolutionize the field of nanoelectronics by allowing faster, smaller and more energy-efficient memory devices. These programs are supported by the National Science Foundation, Division of Materials Research, Materials Research Science and Engineering Program, Grant 0820521. NSF-MRSEC

More Related