1 / 14

22/11/2006

FCAL. C ollaboration. High precision design. Lumi Cal Towards electronics design. Halina Abramowicz, Ronen Ingbir, Sergey Kananov, Aharon Levy, Iftach Sadeh. Tel Aviv University. 22/11/2006. Signals in Units of Ch arge. Sensors Area Sensors Thickness. Phys ic s Sample.

kato-dyer
Download Presentation

22/11/2006

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. FCAL Collaboration High precision design LumiCal Towards electronics design Halina Abramowicz, Ronen Ingbir, Sergey Kananov, Aharon Levy, Iftach Sadeh Tel Aviv University 22/11/2006

  2. Signals in Units of Charge • Sensors Area • Sensors Thickness Physics Sample • 250 GeV MIPS (Muon sample) • 250 GeV electrons (contained EM showers)

  3. Calculating the Charge Induced in Silicon Energy to create electron/hole pair Electron Charge Number of Electrons Signal Charge

  4. MIP Energy Loss in Silicon Energy loss (250Gev MIP): ( See:http://lhcb.physik.unizh.ch/software/doc/loss.pdf) Energy deposited for of silicon This number was also verified in simulation. Cracow’s (Bogdan’s) number (from simulation) is somewhat higher.

  5. MIP Energy Loss in Silicon Energy to create electron/hole pair Charge of 1 electron MIP signal for of silicon

  6. 10 cylinders (θ) 60 cylinders (θ) Cylinders (mrad) 14 11 layers (z) 15 layers (z) 4 layers (z) Present Understanding (pad option) Based on optimizing theta measurement 9

  7. 10 cylinders (θ) 60 cylinders (θ) 11 layers (z) 15 layers (z) 4 layers (z)

  8. High Gain ADC Low Gain Digitization Model The Goal: a resolution of 5 bins per MIP Maximal charge per sensor + buffer FCAL -- TAU

  9. Digitization Model • MIP per bin. • 2. Maximal Shower Charge (electrons) • events cell signal • events cell signal

  10. Summary – 8 Bit Digitization MIP signal for of silicon is for a maximal signal of we therefore have . High gain steps Low gain steps of the Cells are in the high gain region.

More Related