1 / 1

6. GaN-on-Si Photonic Device

Way to minimize dislocation density. GaN LEDs. GaN Power Electronic Devices. GaN&SiC. Next Generation: GaN-on-Si and Ge-on-Si. GaN HEMTs in RF telecommunications. GaN-on-Si Technology. 5. Ge-on-Si Substrate and Application. ▶ Substrate. Si(100), (111). High Efficiency: Green Technology

lizina
Download Presentation

6. GaN-on-Si Photonic Device

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. Way to minimize dislocation density GaN LEDs GaN Power Electronic Devices GaN&SiC Next Generation: GaN-on-Si and Ge-on-Si GaN HEMTs in RF telecommunications • GaN-on-Si Technology 5. Ge-on-Si Substrate and Application ▶Substrate Si(100), (111) • High Efficiency: Green Technology • Miniaturization: Mobile • High Temperature Stability: Air Cooling • High Voltage: High Power • High Speed: HP&HF ▶Epitaxy System RTCVD RPCVD ▶Ge Photodiode using Ge-on-Si 2. Ge-on-Si Technology Issue 6. GaN-on-Si Photonic Device High Mobility: >2,000cm2/Vs Ge/Si Large Size: > 8 inch Dia. Wide Control: Band-gap & Thickness High Ge (x > 0.4) Ultra-high mobility strained Si CMOS ▶Key Issues 100 % Ge or Compound Ge MOSFETs, GeOI, Photodiode III-V integration Low Ge (x < 0.4) Strained Si CMOS GaN-on-Si Vertical structure Crystalline quality of GaN epi Non-polar structure Ohmic contact Integrated LED + TVS Zener Epi Layer Substrate 3. RTCVD for Ge Epitaxy 7. GaN-on-Silicon Electronic Device By SIGETRONICS, INC. 기존 6 인치 wafer 변환 8 인치 wafer ▶Epi Structure GaN-on-Si GaN-on-Sapphire GaN-on-Ge Stressed GaN-on-Si ▶Epitaxy System SiC Susceptor RTCVD MOCVD 8 inch Load Lock Temp. control system 8 inch Wafer Hand ▶GaN-on-Si 4. Defect Control Process in Ge-on-Si 8. Forecast Hybrid LED @ 2012 7.4 B$ Laser diode @ 2012 2.1 B$ PIN Structure Growth N-type Ge (~400 nm) Transistors GaN Diode & Transistors GaN/SiC RF Power @ 2012 230 M$ Intrinsic Ge (~ 3 ㎛) Power Electronic @ 2012 264 M$ Sensors Deep UV sensors, others… P-type Si substrate Source : Yole Dev, ABI Res Emerging Technology for New Generation of Semiconductor Materials and Devices

More Related