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Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes

Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes. Kiril Simov and Tim Gfroerer Davidson College Mark Wanlass NREL Supported by the American Chemical Society – Petroleum Research Fund. Thermal Radiation. Blackbody Radiation. Photovoltaic Cell. Heat Source.

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Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes

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  1. Temperature-Dependent Transient Capacitance in InGaAs/InP-based Diodes Kiril Simov and Tim Gfroerer Davidson College Mark Wanlass NREL Supported by the American Chemical Society – Petroleum Research Fund

  2. Thermal Radiation Blackbody Radiation Photovoltaic Cell Heat Source Blackbody Radiator Motivation: Thermophotovoltaics

  3. Oxford 77K Experimental Setup Computer with LabVIEW (5) Digital Scope(Tektronix) (1) Capacitance meter (Boonton) (2) (4) Temp Controller (3) Pulse Generator Agilent Cryostat with sample

  4. - - - - - - - - + + + + + + + + + + + + + + + + + + + + + + + + + + + With Bias Depletion Layer P-N Junction Depletion Layer with Bias Depletion Layer P N

  5. Typical Capture Data –Dependence on Pulse Length

  6. Capture Analysis Capture cross-section Holes: s = 2.5 x 10-20 cm2 Electrons: s = 7.5 x 10-21 cm2

  7. Number of Traps ~ 7 x 1015 cm-3

  8. D Typical Escape data – Dependence on Temperature

  9. Escape Analysis ~ trap depth

  10. Conclusions • A deep level has been detected • The effective trap cross-section is ~10-20 cm2 • The trap concentration is ~ 1016 cm-3 • The depth of the level is ~ 0.30 eV • Our results are consistent with sub-bandgap PL from similar structures. • Web links: This talk: http://webphysics.davidson.edu/faculty/thg/talks-posters/MAR-04.ppt PL poster: http://webphysics.davidson.edu/faculty/thg/talks-posters/SESAPS-03.ppt

  11. Device Structure p+ layer junction n layer

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