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This paper explores the effects of gamma radiation on Al-doped ZnO thin films using Cs-137 radioisotope. The study evaluates the optical changes, the role of annealing temperature, and the relationship between film thickness and properties. The experiments involve sol-gel processes and irradiation procedures, showcasing the alterations in optical characteristics and film structure.
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EFFECT OF GAMMA IRRADIATION AT ZNO THIN FILM BY Cs-137 M. Tekina, N. Baydoğanb, E.S. Kayalıa, H. Çimenoğlua, H. Sengelc, F. Akmazc, A. Parlarc, Istanbul Technical University Institute of Energy, Nuclear Researches Division, Metallurgical & Materials Engineering Department, ŞİŞECAM, 4. Levent, 34330
BACKGROUND • ZnO:Althin films have been used widely in industrial applications related to electronic and optical applications such asphotoelectric devices, light emitting diodes. • The physical and chemical properties of this film make it a promising candidate for opto-electronic applications.
OBJECTIVE This paper presents some data on the radiation damages with Cs-137 radioisotope. In this study, the response of Al-doped ZnO thin film to gamma radiation was investigated . • Gamma radiation caused to variations in optical properties of ZnO:Al thin films. • Al-doped ZnO thin film was prepared by the sol-gel spin coating method using homogeneous and stable zinc acetate-dihydrat, ethanol, diethanolamin sol and doped with 5 at. % Al with respect to Zn. • The gamma irradiation on the annealing temperature of the thin film was investigated for the different annealing temperatures. • The spin speedcan effect the optical characteristics of the thin film. The changes on optical characteristicsofirradiated ZnO:Al thin film. • The mechanisim of the thickness on the film is investigated in order to define the interaction of sol with the substrate.
EXPERIMENTS AND METHODSa) Material Properties • Substrate : Soda-lime silicate glass • The thickness of substrate: 1 mm • Silica substrates were cleaned using methanol, acetone and deionized water and then dried in the air before the deposition of the films.
b) Details on Sol-Gel Process • ZnO:Al thin films were deposited by a spin-coating process. • To obtain sol,Zincacetat-dihydrat was first dissolved into ethanol by adding Diethanolamin at 60 °C. • The dopant source of aluminium was Aluminiumnitrat-Nanohydrat • The molar ratio of dopant (Al:Zn) was 5%. • The solution was dropped onto glass substrates at room temperature. • The obtained solution was transparent. • The spin coating speeds were set at two different spin speed as 5000 and 8000 rpm.
c) Irradiation Process Samples Source Fig.1 The setlement of samples Table-1 The properties of Cs-137 radioisotope Irradiation was done at room temperature.
RESULTS AND DISCUSSIONS The effect of the spin speed on optical characteristics for unirradiated and irradiated thin films.
The relation between the thickness and layer of the film. • The thickness of the film has changed with the increasing of the film layer. • This change was fitted to a polynomial function with degree 2. • It is expected that the relation between the thickness and layer of the film should be fitted a linear function. However when the number of the layer of the film increases the surface of the film reaches more formless and rough structure at a topographical way. • The friction between the sol and the substrate increases as the result of the increase of the thickness with the more formless and rough surface.
CONCLUSIONS • The photon energy 661.66 keV of Cs-137 radioisotope was convenient to evaluate the optical changes on ZnO:Al thin films. • Absorbed dose of the film with 0.05 Gy altered the optical absorbance of ZnO:Al thin film. • The transmittance of ZnO:Al thin film decreased with the increase of spin speed and annealing temperature of the film.
ACKNOWLEDGMENTS This study is supported by TUBITAK as a research project with the projectnumber of 107M545.
ACKNOWLEDGMENTS The experiments were done in Istanbul Technical University, • Institute of Energy, Nuclear Researches Division • Metallurgical & Materials Engineering Department