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Surface modification of tungsten due to carbon ion implantation

Surface modification of tungsten due to carbon ion implantation. A. Martinavičius. Introduction. The first wall of future fusion devices will be made from the materials W, C and Be.

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Surface modification of tungsten due to carbon ion implantation

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  1. Surface modification of tungsten due to carbon ion implantation A. Martinavičius

  2. Introduction • The first wall of future fusion devices will be made from the materials W, C and Be. • The W tiles in the divertor chamber are exposed to high heat and carbon impurity fluxes which will lead to high C concentrations in the W.

  3. Schematic view of model • Not all atoms are immediately sputtered. • Some atoms are activated and relocate. • Other atoms after relocation also are sputtered. Target

  4. 1 2 3 K Model Ii – flux of arriving ions, Yi – sputtering yield αij – sticking coefficient

  5. Calculations K. Krieger, J. Roth / J. Nucl. Mater. 290-293 (2001) 107-111

  6. Calculations (2)

  7. Diffusion data D = 0 m2/s, T = 3.66 (103 K-1) D = 5 10-23 m2/s, T = 1.29 (103 K-1) D = 1.5 10-22 m2/s, T = 1.03 (103 K-1) D = 5 10-21 m2/s, T = 0.93 (103 K-1)

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