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PIDS Major Revision for 2009 Logic:

PIDS Major Revision for 2009 Logic: Add p-MOSFET performance (n-channel/p-channel Isat and cap ratios). Add ring-oscillator delays (FO=1 & FO=3 or 4, in addition to CV/I ). Racc specs tightened (35% Isat degradation as opposed to 40-50%). Ioff = 100 nA/um (as opposed to 200-700 nA/um). NVM:

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PIDS Major Revision for 2009 Logic:

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  1. PIDS Major Revision for 2009 Logic: • Add p-MOSFET performance (n-channel/p-channel Isat and cap ratios). • Add ring-oscillator delays (FO=1 & FO=3 or 4, in addition to CV/I). • Racc specs tightened (35% Isat degradation as opposed to 40-50%). • Ioff = 100 nA/um (as opposed to 200-700 nA/um). NVM: • NAND half-pitch, pull in1year from ITRS 2008, i.e. 32 nm in 2010. • FG-CTF transition in 2012, delay 2 years. 3D-CTF in 2014, delay 1year. • 3 bit–4bit/cell transition delays 2 years (2012). • NOR Flash survey on-going. • Add STT MRAM. DRAM: • Cell factor–4F2 cell in 2011. Reliability: (New Sub-Group lead) • Major correction in the reliability requirement specifications. • Increase emphasis on circuit impact of device reliability issues. • Bring up the need for paradigm change and the challenge involved. • ddd

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