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Development of a Specification for 130nm staves

Development of a Specification for 130nm staves. PS QMUL 2 ND Feb 2011. GB and PS Agree in thermal analysis. Surface. Symmetric ¼ - module: Serial Powering (+ HCC dissipation folded into ABCs) Hybrid location: shifted for 256 channel bonding Chip Power: 278mW/chip

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Development of a Specification for 130nm staves

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  1. Development of a Specification for 130nm staves PS QMUL 2ND Feb 2011

  2. GB and PS Agree in thermal analysis Surface Symmetric ¼ - module: Serial Powering (+ HCC dissipation folded into ABCs) • Hybrid location: shifted for 256 channel bonding • Chip Power: 278mW/chip = 210mW (useful) + 50mW (SP overhead) +(180/10)mW (HC) • CO2 cooling • Temp -30°C • HTC 8000W/m2/K • CoolingTube: 2mm ID Titanium • RAL sensor glue mask, Honeycomb ~ Air … Plots are for 1mw/mm2(0C) sensor power. Asymmetric hybrid location along Z => rear of module warmer than front. Sensor

  3. (T>-18C: detail - dependent) DCDC -27.0 < Tsensor < -22.0 Mean Tsensor: -25.2C SP -26.6 < Tsensor < -23.2 Mean Tsensor: -25.2C Temperatures with Chips Powered (but zero Sensor Power)SP: Top/Bottom faces: same T distribution (reflected - since HCCs near opposite edge) DCDC: Concentrated heating => less uniform than SP, bottom face worse (HCCs, DCDC on same side). But: Mean sensor temperature (over all nodes) is almost identical! (notethat DCDC mounted o/s sensor) Bottom faces - 1C temperature bands -30C (coolant) to -18C

  4. 0.65 Thermal Runaways.. PS GB

  5. Facings: Halving pre-preg fibre weight: CFRP Kx is halved. Guess Y conductance ~doubled. From chart: => nett loss of ~ 1C in headroom. Changing lay-up to 90-0-90: Increases headroom by 1.7C (Tc), 20% (power).

  6. Z=0 (U-bend): Z=0 module with no foam around curved sections has appreciably lower headroom for given final power dissipation. But: Lower fluence is predicted at Z=0 than at Z=1200 mm. Not so easy to see in usual (Lancaster) contour log plot. More clear in RH plot (my plot of sample of simulation data): Radiation twiki quotes final neq: 1.2E15 at Z = 1170; 9.8E14 at Z=0; => 18.3% lower. => Scale final power dissipation (for 3000 fb-1): 0.65mW/mm2 at Z=1200 => 0.53mW/mm2 at Z=0. Q: Do we expect any f dependence?

  7. support region (4mm PEEK) FOAM Corner foam Present/Absent - Plot headroom for lower fluence expected at Z=0. - To achieve maximum length straight foam sections: remove end foam and peek support - extend pipe right up to end close-out - reduce bend radius 15mm => 10mm. - Caveat: ~1C uncertainty on these results!

  8. Stave Model Getting there • Height and size of the DCDC Chip and mini board (if there is one) needed.

  9. Module Drawings WIP(Awaiting Oxford Meeting)

  10. John Carroll working on Bond Pad Drawings

  11. Stave Drawings WIPTop Assy Drg:NP49-01-100(All sheets Available as a A0 pdf)

  12. Hybrids Not Symmetrical(To keep HCC Chip on locking bracket side) Bottom Side Top

  13. Consider End Mounted SMC

  14. Changes to existing knowledge and things to do. • Layout of modules have changed which will have an effect thermally, although not drastic. • Facing thickness now 0.15mm • Chip sizes and changes in glue thicknesses • All Drawings WIP progress but reasonably up to date with the information known. • Module hybrid dimensions still ‘fluid’

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