70 likes | 272 Views
New IGBT Module for X-ray & Welder Application. Mitsubishi Power Module. Power Semiconductor Works 2005. Dec. Comparison for HF-IGBTs. Development plan 1200V,100 – 600A 2in1 or 1in1. @125deg.(typ.). Trade-off performance for HF-IGBTs. @ Tj=125degC. CM200DY-24NF.
E N D
New IGBT Module for X-ray & Welder Application Mitsubishi Power Module Power Semiconductor Works 2005. Dec.
Comparison for HF-IGBTs Development plan 1200V,100 – 600A 2in1 or 1in1 @125deg.(typ.)
Trade-off performance for HF-IGBTs @ Tj=125degC CM200DY-24NF New HF Series(TS) FF200R12KT3 CM200DU-24NFH FF200R12KS4
New HF-IGBT Outline (Type A) Dimension in mm TENTATIVE TAB#110×4
New HF-IGBT Outline (Type B) Dimension in mm TENTATIVE