Simple piezoresistive pressure sensor

1. Simple piezoresistive pressure sensor

2. Simple piezoresistive accelerometer

3. Simple capacitive accelerometer • Cap wafer may be micromachined silicon, pyrex, … • Serves as over-range protection, and damping • Typically would have a bottom cap as well. C(x)=C(x(a)) Cap wafer

4. Simple capacitive pressure sensor C(x)=C(x(P))

5. ADXL50 Accelerometer • +-50g • Polysilicon MEMS & BiCMOS • 3x3mm die • Integration of electronics!

6. ADXL50 Sensing Mechanism • Balanced differential capacitor output • Under acceleration, capacitor plates move changing capacitance and hence output voltage • On-chip feedback circuit drives on-chip force-feedback to re-center capacitor plates (improved linearity).

7. Analog Devices Polysilicon MEMS

8. ADXL50 – block diagram • http://www.analog.com/en/mems-and-sensors/imems-accelerometers/products/index.html

9. Digital Output MEMS Gyroscope Chip Proof Mass SenseCircuit Rotation induces Coriolis acceleration Electrostatic Drive Circuit J. Seeger, X. Jiang, and B. Boser

10. 1mm Drive 0.01Å Sense MEMS Gyroscope Chip J. Seeger, X. Jiang, and B. Boser

11. Two-Axis Gyro, IMI(Integrated Micro Instruments Inc.)/ADI (fab)

12. Single chip six-degree-of-freedom inertial measurement unit (uIMU) designed by IMI principals and fabricated by Sandia National Laboratories

13. TI Digital Micromirror Device

14. www.dlp.com

16. Seal ring Landing ring MEMS Gate Microbump Feedthrough Dielectric Beam Drain Beam Source Package Substrate Drain Gate Source Gate Drain Source NEU/ADI/Radant/MAT Microswitches http://www.radantmems.com/radantmems/switchoperation.html Surface Micromachined Post-Process Integration with CMOS 20-100 V Electrostatic Actuation ~100 Micron Size SEM of NEU microswitch MAT Microswitch

17. Contact Detail Contact End of Switch

18. Spectrometer cross-section Surface Micromachined Spring System Electrostatic Actuator Plates

19. Fabricated Microspectrometers

20. Intensity vs. Wavelength l = 575nm FWHM = 30nm RP = 20 l =515 nm FWHM = 25nm RP = 21 l =625nm FWHM = 39nm RP = 16

21. Packaged Plasma Source Top View Die in Hybrid Package Side View

22. Fabrication SEM of Interdigitated Capacitor Structure

23. Optical MEMS Vibration Sensors Uniform cantilever beam Foster Miller - Diaphragm Cantilevered paddle Cantilevered supported diaphragm

24. Optically interrogated MEMS sensors 55 mm length cantilevered paddle after 7 hours of B.O.E. releasing and lifted up with a 1mm probe (~0.35mm thick, 2mm gap)

25. Courtesy Connie Chang-Hasnain

26. Courtesy Connie Chang-Hasnain

27. Micromachining Ink Jet Nozzles Microtechnology group, TU Berlin

28. (UCLA, Fan)

29. (Gruning)

30. Gene chips, proteomics arrays.

43. NEMS: TOWARD PHONON COUNTING: Quantum Limit of Heat Flow. Roukes Group Cal Tech Tito

44. From Ashcroft and Mermin, Solid State Physics.

45. Other: NSF-Funded NSEC, Center for High-Rate Nanomanufacturing (CHN): High-rate Directed Self-Assembly of Nanoelements Proof of Concept Testbed • Nanotube Memory Device Partner: Nantero first to make memory devices using nanotubes • Properties:nonvolatile, high speed at <3ns, lifetime (>1015 cycles), resistant to heat, cold, magnetism, vibration, and cosmic radiation. Nanotemplate: • Layer of assembled nanostructures transferred to a wafer. Template is intended to be used for thousands of wafers.

46. Switch Logic, 1996, Zavracky, Northeastern Inverter NOR Gate

47. Simple Carbon Nanotube Switch Diameter: 1.2 nm Elastic Modulus: 1 TPa Electrostatic Gap: 2 nm Binding Energy to Substrate: 8.7x10-20 J/nm Length at which adhesion = restoring force: 16 nm Actuation Voltage at 16 nm = 2 V Resonant frequency at 16 nm = 25 GHz Electric Field = 109 V/m or 107 V/cm + Geom. (F-N tunneling at > 107 V/cm) Stored Mechanical Energy (1/2 k x2 ) = 4 x 10-19 J = 2.5 eV 4 x 10-19 = ½ CV2 gives C = 2 x 10-19 << electrode capacitance! Much more energy stored in local electrodes than switch.

49. Biological Nanomotor