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A presentation on fermi fet technology

A presentation on fermi fet technology. Submitted By-: Shashank Joshi Mahesh Bhatt. OVERVIEW. Introduction to Fermi FET Technology Surface Channel Inversion Devices Buried Channel Accumulation Devices Difference between BCA and SCI devices Fermi FET Applications of Fermi FET

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A presentation on fermi fet technology

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  1. A presentation on fermifet technology Submitted By-: Shashank Joshi Mahesh Bhatt

  2. OVERVIEW • Introduction to Fermi FET Technology • Surface Channel Inversion Devices • Buried Channel Accumulation Devices • Difference between BCA and SCI devices • Fermi FET • Applications of Fermi FET • Conclusion • References

  3. Introduction to Fermi FET • Fermi FET devices were manufactured and patented by Thunderbird Technologies. • Fermi FET can lead to significant improvement in circuit performance, power requirements and manufacturing costs. • This technology merges the mobility of BCA devices as well as the higher short channel effect immunity of SCI devices

  4. SURFACE CHANNEL INVERSION DEVICES Surface channel inversion devices were developed due to their reduced short channel effects.

  5. ADVANTAGES AND DISADVANTAGES OF SCI DEVICES • Advantages • Short channel effects were greatly reduced in SCI devices. • Transistor scaling was successfully implemented in SCI devices. • Disadvantages • Mobility of charge carriers is reduced. • High parasitic capacitance and polysilicon depletion.

  6. BURIED CHANNEL ACCUMULATION DEVICES For longer channel widths BCA architecture is widely used. The mechanical structure of BCA devices are very similar to SCI devices but their working is different.

  7. MERITS AND DEMERITS OF BCA DEVICES • MERITS • Mobility of charge carriers is improved in BCA devices. • Vertical field within channel is lower due to availability of channel. • DEMERITS • Transistor scaling is not possible. • Due to fermi level at certain depth, it is difficult to shut the device off.

  8. DIFFERENCES BETWEEN BCA &SCI DEVICES • In BCA devices, polysilicon gate is doped as p-type whereas in SCI devices gate is doped as n-type. • In BCA devices, there is a channel between the source and drain whereas an inversion channel is formed in SCI devices. • Mobility of charge carriers in SCI devices is poor whereas it is much improved in SCI devices.

  9. FERMI FET The buried channel transistors had fermi level at a considerable depth thereby making it difficult to shut the device off. Attempts to bring fermi level up results in severe degradation of device performance. Thunderbird Technologies took one step further and produced the FERMI FET device.

  10. LOGO OF THUNDERBIRD TECHNOLOGIES

  11. APPLICATIONS • DSP • MPU • MCU • LOGIC GATES • SRAM • COMMUNICATION SYSTEM

  12. Digital signal processing method A Microcontroller

  13. CONCLUSION • Fermi Fet has revolutionised the transistor technologies. • Gate lengths have been reduced, without compromising with the performance of the transistors devices. • As this technology is recent, so there are lot more fields where this technology can be applied successfully.

  14. REFERENCES • http://www.tbird.com/technology.html • http:/www.scribd.com/50122591/Fermi-FET-Technology-seminar-report • http:/seminars4u.blog.co.in/2008/11/02/fermi-fet-technology

  15. THANKYOU

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