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Intensity

Intensity. I. (W m - 2 ). Intensity = Power. Area. P. I =. A. Inverse square law. I d 2 =. I d 2. A A. B B. Photoelectric effect. current. f o. frequency. Energy of photons. E = h f. h is Planck’s constant. Intensity of photons. I = N h f.

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Intensity

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  1. Intensity I (W m-2)

  2. Intensity = Power Area P I = A

  3. Inverse square law I d2= I d2 A A B B

  4. Photoelectric effect current fo frequency

  5. Energy of photons E = h f h is Planck’s constant

  6. Intensity of photons I = N h f N is number of photons per second

  7. Work function Minimum energy to release electron from a surface (E = h fo)

  8. Kinetic Energy E = h f - h fo Energy above minimum appears as kinetic

  9. Emission spectra W2 red W1 violet W0

  10. Emission spectra W2 – W1 = h f Electron ‘jumps’ from excited level to lower level

  11. Emission spectra Bright emission lines - more electrons

  12. Absorption spectra W2 Photon ofenergyh f W1

  13. Absorption spectra W2 = W1+ h f Electron absorbs radiation and ‘jumps’ to excited level

  14. Spontaneous emission random process

  15. Stimulated emission Photon (energy h f) can cause atom to emit photon (energy h f) in phase and same direction

  16. Laser E1 Stimulating photon (hf) E0

  17. Laser Monochromatic Coherent Intense

  18. Semiconductors n-type p-type

  19. n-type Conduction by negative electrons

  20. p-type Conduction by ‘positive’ holes

  21. Forward-biased n-type p-type electrons diode conducts

  22. Reverse-biased n-type p-type diode does not conduct

  23. Diode Forward-biased diode electron and hole recombine Photon (heat) emitted

  24. LED Forward-biased diode electron and hole recombine Photon (light) emitted

  25. photodiode Photovoltaic mode supplies power e.g. solar cell

  26. photodiode Photoconductive mode (reverse bias) light sensor

  27. MOSFET n-region implant drain oxide layer n-channel gate p-type substrate source n-channel enhancement MOSFET

  28. MOSFET Can switch on a load. Apply gate voltage VGS to turn ‘on’ MOSFET

  29. MOSFET + V load D Io G S VGS 0 V n-channel enhancement MOSFET

  30. MOSFET Can also be used as an AMPLIFIER

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