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TCAD Simulation Semiconductor Technology Computer-Aided Design (TCAD) tool

2013/9/2 HSTD9-ID54. Potential in bulk, 2D display. p-stop. Silicon avalanche breakdown voltage ~300 kV/cm. n + -Implant. n + -Implant. Location of bias voltage breakdown in n-in-p silicon segmented sensors with p-stop structure before and after irradiation. Backplane (-200 V).

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Highly infra - PowerPoint PPT Presentation

TCAD Simulation Semiconductor Technology Computer-Aided Design (TCAD) tool