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Atomic Layer Deposition - ALD

Atomic Layer Deposition - ALD. Introduction Example of Al 2 O 3 ALD at MiNaLab Deposition materials Advantages and disadvantages Summary. Atomic Layer Deposition. Excellent thickness controll and step coverage Self-limited process Developed in 1974

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Atomic Layer Deposition - ALD

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  1. Atomic Layer Deposition - ALD Introduction Example of Al2O3 ALD at MiNaLab Deposition materials Advantages and disadvantages Summary

  2. Atomic Layer Deposition Excellent thickness controll and step coverage Self-limited process Developed in 1974 First industrial use: electrolumenicent panels

  3. Some opportunities of ALD • Nanolaminate: ZrO2 and SiO2 • Coated deep trench structure

  4. ALD of Al2O3 on Si

  5. ALD at MiNaLab Al2O3, ZnO, TiO2 Thickness: sub nm - 400 nm

  6. ALD – deposited materials • Oxides (Al2O3, ZnO, TiO2, HfO2, HfSiO, La2O3, SiO2, Ta2O5) • Nitrides (TiN, TaN, SiN, HfN, AlN) • Sulfides (ZnS) • Metals (Cu, W, Pt, Ru)

  7. Applications • High quality photonics • Thin solarcells laminate => • Thin gate oxides with high dielectric constant • Diffusion barriers and passivation of active layers • Single metal coating for catalysts

  8. Advantages of ALD • Low temperature deposition is possible • Excellent step coverage and reproducibility • High density film and no pinholes • Easy to scale up

  9. Disadvantages of ALD • Expensive equipment • Critical adjustment of the flow: too much flow => clogging of valves too low flow => under-performance

  10. Summary ALD is excellent for: • Thin films • High density • Excellent stociometry controll • 3D structures • Large area substrates: no problem 

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